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Numerical quantification and minimization of perimeter losses in high‐efficiency silicon solar cells
Author(s) -
Altermatt Pietro P.,
Heiser Gernot,
Green Martin A.
Publication year - 1996
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199609/10)4:5<355::aid-pip145>3.0.co;2-x
Subject(s) - perimeter , wafer , solar cell , enhanced data rates for gsm evolution , silicon , reduction (mathematics) , materials science , thermal , energy conversion efficiency , computer science , optoelectronics , mathematics , geometry , physics , telecommunications , meteorology
This paper presents a quantitative analysis of perimeter losses in high‐efficiency silicon solar cells. A new method of numerical modelling is used, which provides the means to simulate a full‐sized solar cell, including its perimeter region. We analyse the reduction in efficiency due to perimeter losses as a function of the distance between the active cell area and the cut edge. It is shown how the optimum distance depends on whether the cells in the panel are shingled or not. The simulations also indicate that passivating the cut‐face with a thermal oxide does not increase cell efficiency substantially. Therefore, doping schemes for the perimeter domain are suggested in order to increase efficiency levels above present standards. Finally, perimeter effects in cells that remain embedded in the wafer during the efficiency measurement are outlined.