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Simultaneous dopant diffusion and surface passivation in a single rapid thermal cycle
Author(s) -
Lachiq A.,
Slaoui A.,
Georgopoulos L.,
Ventura L.,
Monna R.,
Muller J. C.
Publication year - 1996
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199609/10)4:5<329::aid-pip131>3.0.co;2-0
Subject(s) - passivation , materials science , common emitter , dopant , boron , saturation current , diffusion , analytical chemistry (journal) , optoelectronics , doping , layer (electronics) , chemistry , nanotechnology , electrical engineering , physics , organic chemistry , voltage , chromatography , thermodynamics , engineering
In this work, we present results on simultaneous formation of emitter/back‐surface field or emitter/surface passivation in a single rapid thermal cycle. We have investigated the diffusion kinetics of dopant elements like phosphorus, boron (from a doped spin‐on glass (SOD) film), aluminium (from evaporated films) or aluminium‐boron (from an A1‐B SOD film). In particular, we have shown that rapid thermal co‐diffusion of P and A1 (or A1‐B) leads to low sheet resistances, optical emitter profiles and a hig h gettering effect. Furthermore, the possibility of using the remaining SOD films as a surface passivation layer was investigated. Dark saturation current measurements as deduced from the photoconductivity decay technique demonstrate the passivation effec t of the remaining SOD film. The highest efficiency of 12.8% obtained was achieved on SOD oxide‐coated solar cells.