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Silicon‐containing poly(amide‐ether)s
Author(s) -
Bruma M.,
Sava I.,
Mercer F.,
Reddy V. N.,
Köpnick T.,
Stiller B.,
Schulz B.
Publication year - 1998
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/(sici)1099-1581(1998100)9:10/11<752::aid-pat822>3.0.co;2-o
Subject(s) - materials science , glass transition , differential scanning calorimetry , polymer , polymer chemistry , thermal stability , ether , condensation polymer , thermal decomposition , chemical engineering , silicon , composite material , organic chemistry , chemistry , physics , engineering , metallurgy , thermodynamics
New aromatic poly(amide‐ether)s ( II ) have been synthesized by solution polycondensation of various aromatic diamines having two ether bridges ( I ) with a diacid chloride containing silicon, namely bis(chlorocarbonylphenyl)‐diphenylsilane. These polymers are easy soluble in polar amidic solvents such as N‐methylpyrrolidinone or dimethylformamide and can be cast into thin flexible films or coatings from such solutions. They show high thermal stability with initial decomposition temperature being above 400°C. Their glass transition temperatures lie in the range of 220–250°C, except for polymer IIe which did not show a clear T g when heated in a differential scanning calorimetry experiment up to 300°C. The large interval between the glass transition and decomposition temperatures of polymers Ia–Id could be advantageous for their processing via compression molding. The polymer coatings deposited by the spin‐coating technique onto silicon wafers showed a very smooth, pinhole‐free surface in atomic force microscopy investigations. The free‐standing films of 20–30 μm thickness show low dielectric constant, in the range of 3.65–3.78, which is promising for future application as high performance dielectrics. © 1998 John Wiley & Sons, Ltd.