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Application of energy transfer model to partially DCM‐doped Alq 3 light‐emitting diode
Author(s) -
Mori Tatsuo,
Mizutani Teruyoshi
Publication year - 1997
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/(sici)1099-1581(199707)8:7<471::aid-pat675>3.0.co;2-g
Subject(s) - materials science , exciton , doping , diffusion , radiative transfer , oled , light emitting diode , diode , quinoline , excited state , photoluminescence , optoelectronics , quantum yield , atomic physics , optics , condensed matter physics , physics , fluorescence , nanotechnology , thermodynamics , chemistry , organic chemistry , layer (electronics)
Theelectroluminescent (EL) properties of partially‐DCM doped Alq 3 (tris(8‐quinoline) aluminum) light‐emitting diodes (LEDs) are discussed on the basis of a simple energy transfer model due to exciton diffusion. The EL process is described as the product of the distribution of exciton density of Alq 3 and the radiative probability of excited molecule. Using the separated EL intensities from Alq 3 and DCM, the various ratios of EL intensities calculated from the model were compared with the experimental results. The diffusion length of the Alq 3 exciton was estimated to be 20 nm. The radiative probability of DCM‐doped Alq 3 was found to be 4.4 times higher than that of Alq 3 . The ratio of the former to the latter almost agreed with the ratio of the quantum photoluminescent yield. The doped DCM molecules are speculatd to suppress the generation of the Alq 3 exciton. The model is very simple, but explains the practical EL characteristics in organic dye‐doped Alq 3 LEDs. © 1997 John Wiley & Sons, Ltd.