Premium
Existence and Uniqueness of Solutions for a Semiconductor Device Model with Current Dependent Generation‐recombination Term
Author(s) -
Wrzosek Dariusz
Publication year - 1996
Publication title -
mathematical methods in the applied sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.719
H-Index - 65
eISSN - 1099-1476
pISSN - 0170-4214
DOI - 10.1002/(sici)1099-1476(199610)19:15<1199::aid-mma825>3.0.co;2-k
Subject(s) - uniqueness , term (time) , mathematics , semiconductor , dimension (graph theory) , current (fluid) , recombination , diffusion , space (punctuation) , mathematical analysis , physics , quantum mechanics , pure mathematics , chemistry , thermodynamics , computer science , operating system , biochemistry , gene
A drift‐diffusion model for a semiconductor device is studied. It is assumed that mobilities saturate for large densities of current carriers. The model includes the generation‐recombination term of Shockley–Read–Hall and Auger as well as the avalanche term. The existence of weak solutions is proved for space dimensions=1, 2, 3 and uniqueness of solutions is showed in the case of one space dimension.