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Numerical simulation of oscillatory flow in melt during InSb single crystal growth by RF heating Czochralski method
Author(s) -
Okano Yasunori,
Audet Nicholas,
Dost Sadik,
Hayakawa Yasuhiro,
Kumagawa Masashi
Publication year - 1998
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/(sici)1099-1204(199811/12)11:6<289::aid-jnm313>3.0.co;2-e
Subject(s) - crucible (geodemography) , rotation (mathematics) , crystal (programming language) , oscillation (cell signaling) , mechanics , materials science , thermocouple , flow (mathematics) , discretization , micro pulling down , volumetric flow rate , computer simulation , melt flow index , single crystal , thermal , crystal growth , condensed matter physics , physics , thermodynamics , chemistry , mathematics , crystallography , composite material , geometry , mathematical analysis , computer science , biochemistry , computational chemistry , copolymer , programming language , polymer
Oscillatory flow present in the melt during InSb single crystal growth using an RF‐heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtained experimentally by measuring the temperature profile along the crucible of a Czochralski system by means of thermocouples mounted in the crucible. Results of numerical simulations showed that the use of a third‐order upwind discretization scheme was necessary to catch the oscillatory behaviour of the fluid flow in the melt. It was shown that this oscillatory behaviour strongly depends on the crystal rotation rate. Indeed, the oscillation period increases when the crystal rotation rate is above a critical rotation rate. In order to avoid such oscillations, crystal rotation rates lower than this critical value of crystal rotation rate must be selected for the growth of high quality crystals free of striations. © 1998 John Wiley & Sons, Ltd.