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Numerical analysis of abrupt heterojunction bipolar transistors
Author(s) -
GarciaLoureiro Antonio J.,
LopezGonzalez Juan M.,
Pena Tomas F.,
Prat Lluis
Publication year - 1998
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/(sici)1099-1204(199807/08)11:4<221::aid-jnm303>3.0.co;2-v
Subject(s) - thermionic emission , bipolar junction transistor , heterojunction , quantum tunnelling , common emitter , thermal conduction , heterojunction bipolar transistor , optoelectronics , transistor , computer science , computational physics , materials science , electronic engineering , physics , voltage , electron , quantum mechanics , engineering
This paper presents a physical–mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift–diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter–base interface. Fermi–Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non‐parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message‐passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization‐based preconditioners have been used. © 1998 John Wiley & Sons, Ltd.