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Electrode separation method to the boundary condition for a‐Si TFT mixed‐level simulation
Author(s) -
Tsai YaoTsung,
Ke TienChi
Publication year - 1998
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/(sici)1099-1204(199803/04)11:2<123::aid-jnm295>3.0.co;2-1
Subject(s) - thin film transistor , electronic circuit simulation , boundary value problem , electrode , electronic circuit , separation (statistics) , poisson's equation , transistor , computer simulation , computer science , mechanics , electronic engineering , electrical engineering , simulation , mathematics , mathematical analysis , voltage , engineering , physics , quantum mechanics , machine learning
This paper presents the electrode separation method for the boundary condition of a‐Si TFT mixed‐level simulation. The Poisson equation and the continuity equation are formulated into equivalent circuits. So, a circuit simulator can be used to handle the two‐dimensional numerical simulation of a‐Si TFT. The boundary condition problem between a semiconductor and an external circuit is solved by the electrode separation method. An electrode is separated into two nodes to fit Kirchhoff's current law and the semiconductor equations, respectively. A simple a‐Si TFT/LCD circuit is taken as an example for the electrode separation method. For mixed‐level simulation this technique is very useful. © 1998 John Wiley & Sons, Ltd.