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A PARALLEL IMPLEMENTATION OF A TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR MICROWAVE SEMICONDUCTOR DEVICE INCLUDING INERTIA EFFECTS IN MOMENTUM RELAXATION
Author(s) -
ALSUNAIDI MOHAMAD A.,
HAMMADI SAMIR M.,
ELGHAZALY SAMIR M.
Publication year - 1997
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/(sici)1099-1204(199703)10:2<107::aid-jnm263>3.0.co;2-f
Subject(s) - mesfet , boltzmann equation , inertia , computational physics , microwave , mechanics , relaxation (psychology) , momentum (technical analysis) , physics , boltzmann constant , signal (programming language) , semiconductor device , semiconductor , statistical physics , materials science , classical mechanics , optoelectronics , computer science , transistor , thermodynamics , field effect transistor , voltage , economics , composite material , psychology , social psychology , finance , quantum mechanics , programming language , layer (electronics)
A self‐consistent numerical transport model based on the hydrodynamic equations obtained from Boltzmann's transport equation (BTE) is presented. The model includes both the temporal and spatial variation in electron velocity. A parallel implementation of the solution method, using FDTD techniques, is illustrated. Numerical results for a GaAs MESFET device are generated using this complete hydrodynamic model (CHM) and compared with results obtained from the more commonly used energy or simplified hydrodynamic model (SHM). The results indicate that for short gate‐lengths (less than 0⋅5 μm) the two models lead to different DC steady‐state results which in turn lead to different microwave small‐signal models for the device. © 1997 by John Wiley & Sons, Ltd.