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New molecular compound precursor for aluminum chemical vapor deposition
Author(s) -
Shinzawa Tsutomu,
Uesugi Fumihiko,
Nishiyama Iwao,
Sugai Kazumi,
Kishida Shunji,
Okabayashi Hidekazu
Publication year - 2000
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/(sici)1099-0739(200001)14:1<14::aid-aoc936>3.0.co;2-j
Subject(s) - chemistry , chemical vapor deposition , monomer , aluminium , selectivity , hydride , indium , inorganic chemistry , organic chemistry , polymer , metal , catalysis
A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO 2 mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd.