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IR laser‐induced decomposition of disiloxane for chemical vapour deposition of poly(hydridosiloxane) films
Author(s) -
Pola Josef,
Urbanová Markéta,
Dřínek Vladislav,
Šubrt Jan,
Beckers Helmut
Publication year - 1999
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/(sici)1099-0739(199909)13:9<655::aid-aoc893>3.0.co;2-0
Subject(s) - disiloxane , chemistry , silane , chemical vapor deposition , decomposition , deposition (geology) , polymerization , chemical decomposition , chemical engineering , polymer chemistry , photochemistry , organic chemistry , polymer , paleontology , sediment , engineering , biology , catalysis
Continuous‐wave CO 2 ‐laser‐induced gas‐phase decomposition of H 3 SiOSiH 3 , dominated by elimination and polymerization of transient silanone H 2 SiO and yielding silane and hydrogen as side‐products, represents a convenient process for chemical vapour deposition of poly(hydridosiloxane) films. Copyright © 1999 John Wiley & Sons, Ltd.