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Si/C phases from the IR laser‐induced decomposition of divinylsilane
Author(s) -
Dřínek Vladislav,
Bastl Zdeněk,
Šubrt Jan,
Pola Josef
Publication year - 1998
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/(sici)1099-0739(199806)12:6<427::aid-aoc715>3.0.co;2-o
Subject(s) - chemistry , vinylsilane , decomposition , benzene , silicon carbide , thin film , chemical vapor deposition , laser , deposition (geology) , trichlorosilane , photochemistry , silicon , chemical engineering , analytical chemistry (journal) , organic chemistry , nanotechnology , optics , catalysis , paleontology , materials science , physics , engineering , sediment , biology
Transversely excited atmospheric (TEA) CO 2 laser‐induced decomposition of divinylsilane in the gas phase yields unsaturated C 2 –C 4 hydrocarbons, benzene and vinylsilane, and it represents a convenient process for chemical vapour deposition of thin solid films composed of silicon carbide and polycarbosilane. © 1998 John Wiley & Sons, Ltd.