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Surface hydrogen and growth mechanisms of synchrotron radiation‐assisted silicon gas source molecular beam epitaxy using disilane
Author(s) -
Yoshigoe Akitaka,
Hirano Shinya,
Urisu Tsuneo
Publication year - 1998
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/(sici)1099-0739(199804)12:4<253::aid-aoc701>3.0.co;2-n
Subject(s) - chemistry , disilane , molecular beam epitaxy , silicon , chemisorption , hydrogen , epitaxy , substrate (aquarium) , desorption , synchrotron radiation , analytical chemistry (journal) , adsorption , layer (electronics) , optics , organic chemistry , oceanography , physics , geology
Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)‐assisted gas source molecular beam epitaxy (SR‐GSMBE) using Si 2 H 6 on the Si(100) surface in the low‐temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth by means of infrared reflection absorption spectroscopy with a Si(100) substrate and a CoSi 2 buried metal layer. It is concluded that the chemisorption of gas‐phase reactive species such as SiH n and H generated by SR irradiation and the subsequent hydrogen desorption are the key mechanisms of SR‐GSMBE at low substrate temperatures. © 1998 John Wiley & Sons, Ltd.