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Cp 2 TiCH 2 Si(Me 2 )NSiMe 3 : A Single‐Source Precursor to Titanium‐based Ceramic Thin Films by Chemical Vapor Deposition
Author(s) -
Chansou Benoit,
Choukroun Robert,
Valade Lydie
Publication year - 1997
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/(sici)1099-0739(199703)11:3<195::aid-aoc541>3.0.co;2-q
Subject(s) - chemistry , chemical vapor deposition , thin film , titanium , x ray photoelectron spectroscopy , ceramic , electron microprobe , analytical chemistry (journal) , torr , argon , mineralogy , chemical engineering , organic chemistry , nanotechnology , materials science , physics , engineering , thermodynamics
The four‐membered‐ring heterocyclic molecule Cp 2 TiCH 2 Si(Me 2 )NSiMe 3 (1; Cp=η−C 5 H 5 ) was studied as a single‐source precursor to titanium‐based ceramic thin films. Its decomposition was studied at atmospheric and low pressure under nitrogen, argon and helium by TG–DTA–MS. Thin films containing the four elements of the metallacycle and oxygen were deposited on silicon substrates by low‐pressure (20 Torr) chemical vapor deposition (CVD) between 773 and 923 K. Films were characterized by SEM–EDS, XPS, EPMA–WDS and XRD analyses. © 1997 by John Wiley & Sons, Ltd.