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Synthesis and Structures of (N 3 ) 2 Ga[(CH 2 ) 3 NMe 2 ], (N 3 )Ga[(CH 2 ) 3 NMe 2 ] 2 and (N 3 ) 3 Ga(NR 3 ) (R = CH 3 , C 2 H 5 )
Author(s) -
Devi Anjana,
Sussek Harald,
Pritzkow Hans,
Winter Manuela,
Fischer Roland A.
Publication year - 1999
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/(sici)1099-0682(199912)1999:12<2127::aid-ejic2127>3.0.co;2-n
Subject(s) - chemistry , adduct , azide , alkyl , monomer , crystallography , molecule , solid state , crystal structure , single crystal , stereochemistry , sapphire , organic chemistry , polymer , laser , physics , optics
The synthesis, properties and X‐ray single crystal structure analysis of the intramolecularly adduct‐stabilised organogallium bisazide (N 3 ) 2 Ga[(CH 2 ) 3 NMe 2 ] ( 1 ), the mono azide (N 3 )Ga[(CH 2 ) 3 NMe 2 ] 2 ( 2 ) and the trialkylamine adducts of triazidogallium of the type (N 3 ) 3 Ga(NR 3 ) ( 3a – d ; R = alkyl) are reported. An unusual isomer 1b of compound 1 is described, which was obtained by slow cooling of the analytically pure neat liquid compound 1 to 0 °C. The new and unusual structure 1b can be regarded as a weak associate of dimers linked together by head‐to‐tail azide bridges. In contrast, compounds 2 and 3a – b (R = CH 3 , C 2 H 5 ) are monomeric in the solid state. The suitability of the volatile compounds 1 and 2 as single source precursors to grow GaN thin films by chemical vapour deposition is compared, showing that preferentially oriented crystalline films can be obtained from compound 2 on sapphire substrates at 600–700 °C in vacuo (0.1 Pa). However the films have a grey rather than a transparent appearance, which is presumably due to N‐deficiency owing to the lower N‐content of the single molecule precursor 2 relative to 1 .