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High current handling capacity multilayer inductors for RF and microwave circuits
Author(s) -
Bahl Inder J.
Publication year - 2000
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(200003)10:2<139::aid-mmce7>3.0.co;2-m
Subject(s) - inductor , materials science , q factor , microwave , optoelectronics , electronic circuit , spiral (railway) , substrate (aquarium) , radio frequency , electrical engineering , polyimide , layer (electronics) , electronic engineering , engineering , nanotechnology , mechanical engineering , telecommunications , voltage , oceanography , resonator , geology
We present test data for several spiral inductors with improved quality factor fabricated on GaAs substrates using the ITT MSAG (multifunction self aligned gate) multilayer process. It is shown experimentally that the quality factor of spiral inductors can be enhanced by using thick metallization and placing inductors on a thick polyimide layer which is placed on top of the GaAs substrate. Using this technique we observed up to 68% improvement in the quality factor of spiral inductors as compared to standard spiral inductors. Inductors having thick metallization can also handle DC currents as large as 0.5 A. © 2000 John Wiley & Sons, Inc. Int J RF and Microwave CAE 10: 139–146, 2000.