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A dual mode wideband bipolar microwave transistor voltage‐controlled oscillator design
Author(s) -
Grebennikov Andrey V.
Publication year - 1999
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199909)9:5<424::aid-mmce7>3.0.co;2-n
Subject(s) - voltage controlled oscillator , bipolar junction transistor , vackář oscillator , electrical engineering , microwave , wideband , transistor , heterostructure emitter bipolar transistor , optoelectronics , voltage , physics , electronic engineering , engineering , telecommunications
Results of the design of the microwave bipolar voltage‐controlled oscillator (VCO) on coupled transmission lines, tuned by varactors in a wide frequency range, are presented. An opportunity of realization of VCO octave frequency bandwidth is shown in a common emitter bipolar transistor circuit configuration. The large‐signal model for bipolar transistor is based on its small‐signal Y ‐parameters and DC characteristics. Results of the theoretical analysis and the numerical calculations of the optimal circuit parameters and the tuning oscillator characteristics are given. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 424–434, 1999