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Nonlinear modeling of class‐E microwave power amplifiers
Author(s) -
Marković Milica,
Kain Aron,
Popović Zoya
Publication year - 1999
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199903)9:2<93::aid-mmce4>3.0.co;2-0
Subject(s) - mesfet , dbm , amplifier , microwave , electrical engineering , rf power amplifier , broadband , power (physics) , electronic engineering , transistor , microwave power , nonlinear system , microwave applications , bandwidth (computing) , engineering , physics , telecommunications , cmos , field effect transistor , voltage , quantum mechanics
Verification of the Materka–Kacprzak model suitable for highly saturated MESFET operation is presented. To examine the validity of the model, a broadband microwave class‐E power amplifier was designed and fabricated using a Siemens CLY5 MESFET transistor. A 200 MHz bandwidth (22%) from 0.82 to 1.02 GHz with a power‐added efficiency greater than 60% was measured at an input power level of 15 dBm with a constant output power of 24 dBm. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 93–103, 1999