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Low loss multilayer microstrip line for monolithic microwave integrated circuits applications
Author(s) -
Bahl Inder J.,
Griffin Edward L.,
Dilley John,
Balzan Matt
Publication year - 1998
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199811)8:6<441::aid-mmce5>3.0.co;2-l
Subject(s) - microstrip , materials science , microwave , monolithic microwave integrated circuit , insertion loss , optoelectronics , characteristic impedance , stripline , electronic engineering , impedance matching , dielectric , dielectric loss , integrated circuit , amplifier , electrical engineering , electrical impedance , engineering , telecommunications , cmos
This paper describes the multilayer microstrip structure using low dielectric constant polyimide as a buffer layer between the microstrip conductor and the GaAs substrate to reduce dissipation loss, especially for very high impedance microstrip lines. The new structure provides about half the dissipation loss and about 40% higher characteristic impedance in comparison to the conventional microstrip line on GaAs substrate having the same conductor widths. An empirical formula for the equivalent dielectric constant compatible with commercial computer‐aided design tools was developed to design monolithic microwave integrated circuits (MMICs) using this medium. The multilayer microstrip structure is compatible with ITT's 4′ MSAG ® process which uses polyimide for crossovers and scratch protection. The present structure has great potential in realizing low loss and wideband matching networks including low noise, high power, and high efficiency amplifiers, and passive components on GaAs substrate with improved insertion loss and bandwidth performance, and three‐dimensional MMICs. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 441–454, 1998