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Surface impedance of silicon substrates and films
Author(s) -
Gevorgian S.
Publication year - 1998
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199811)8:6<433::aid-mmce4>3.0.co;2-j
Subject(s) - materials science , dissipation factor , microwave , dielectric , silicon , electrical resistivity and conductivity , sheet resistance , electrical impedance , dielectric loss , substrate (aquarium) , ground plane , semiconductor , composite material , lossy compression , optoelectronics , condensed matter physics , optics , electrical engineering , physics , mathematics , oceanography , statistics , layer (electronics) , quantum mechanics , geology , antenna (radio) , engineering
It is shown that at microwave–millimeterwave frequencies and for DC resistivities below ρ + =(2π f τ ε 0 ε L ) −1 silicon should be regarded as a lossy metal characterized by resistivity, skin depth, and surface impedance, while at higher resistivities it may be regarded as a lossy dielectric characterized by a lattice dielectric constant (ε L =11.7) and loss tangent. The sheet resistance defined as a ratio of DC resistivity to film thickness is not an adequate parameter to characterize the films at microwave frequencies. The surface impedance of a thin semiconductor film is complex with both real and imaginary parts strongly dependent on frequency, DC resistivity of substrate and film, substrate thickness, and the presence of a ground plane on the backside of the substrate. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 433–440, 1998