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Spiral inductors on silicon—status and trends (invited article)
Author(s) -
Burghartz Joachim N.
Publication year - 1998
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199811)8:6<422::aid-mmce3>3.0.co;2-k
Subject(s) - inductor , silicon , spiral (railway) , electronic circuit , microwave , implementation , electrical engineering , integrated circuit , electronic engineering , engineering , computer science , materials science , optoelectronics , telecommunications , mechanical engineering , voltage , software engineering
The status of the integration, the modeling, and the layout of spiral inductors on silicon substrates for rf circuits are reviewed. A summary of the current research activity in this field is presented. The possible inductor implementations are categorized either as conservative, following the silicon main stream, or as innovative approaches. It is concluded that the spiral inductor on silicon is a feasible device and finds extensive use in the design of future silicon‐based rf circuits. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 422–432, 1998.