Premium
Quasi‐two‐dimensional simulation of dual‐gate pseudomorphic heterojunction field effect transistors
Author(s) -
Duhamel F.,
De Jaeger J. C.,
Butel Y.,
Lefebvre M.,
Salmer G.
Publication year - 1998
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199805)8:3<256::aid-mmce9>3.0.co;2-h
Subject(s) - heterojunction , transistor , dual (grammatical number) , microwave , field effect transistor , optoelectronics , materials science , electronic engineering , computer science , electrical engineering , engineering , voltage , telecommunications , art , literature
A quasi‐two‐dimensional model was performed for the analysis of dual‐gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The DC characteristics and the variations of the equivalent circuit elements under cascode configuration can be predicted vs. the different biases. A comparison between physical two‐dimensional simulation and experiment results allows us to validate this approach. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 256–269, 1998.