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Fast prediction and optimization of yield in gallium arsenide large‐signal MMICs
Author(s) -
D'Agostino Stefano,
Paoloni Claudio
Publication year - 1998
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/(sici)1099-047x(199801)8:1<68::aid-mmce10>3.0.co;2-k
Subject(s) - monolithic microwave integrated circuit , mesfet , signal (programming language) , sensitivity (control systems) , gallium arsenide , yield (engineering) , microwave , electronic engineering , integrated circuit , process (computing) , electronic circuit , engineering , computer science , electrical engineering , materials science , transistor , optoelectronics , field effect transistor , telecommunications , cmos , voltage , amplifier , metallurgy , programming language , operating system
A study on the effects of the geometrical and physical parameters of the GaAs MMIC process on the yield of large‐signal circuits is presented. Large‐signal yield analysis as well as large‐signal yield optimization are performed using a large‐signal lumped‐element MESFET model related to MMIC process parameters, and suitable for implementation in commercial microwave CAD tools. The characterization of all the statistical variables of a large‐signal circuit provides a better understanding of the yield behavior. In particular, the sensitivity of large‐signal yield to MMIC process parameters is computed and the statistical behavior of each parameter is presented by means of yield sensitivity histograms. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 68–76, 1998.