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New optical capacitance model for GaAs MESFETs
Author(s) -
Navarro C.,
Zamanillo J. M.,
Mediavilla A.,
Tazón A.,
García J. L.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000705)26:1<16::aid-mop6>3.0.co;2-e
Subject(s) - mesfet , microwave , capacitance , optical power , optoelectronics , range (aeronautics) , materials science , gallium arsenide , microwave applications , power (physics) , electrical engineering , physics , engineering , optics , transistor , telecommunications , voltage , laser , electrode , field effect transistor , quantum mechanics , composite material
New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic variations versus the incident optical power (PL) for gate‐to‐drain and gate‐to‐source capacitances ( C gd and C gs ), respectively, have been found. Experimental results show excellent agreement with the simulated values over a wide range of optical powers and bias conditions. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 16–21, 2000.