Premium
Frequency optimization of pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications
Author(s) -
Agrawal Anju,
Goswami Anisha,
Gupta R. S.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000620)25:6<377::aid-mop5>3.0.co;2-u
Subject(s) - microwave , extremely high frequency , modulation (music) , biasing , field effect transistor , materials science , optoelectronics , voltage , transistor , doping , power (physics) , millimeter , electrical engineering , physics , engineering , optics , quantum mechanics , acoustics
The results of an analysis based on the solution of the 2‐D Poisson equation are presented to investigate the dependence of the small‐signal parameters on biasing conditions. The switching parameters are calculated simply from the charge variations, and it is found that the characteristics depend only on the basic device parameters and terminal voltages. The high value of f t proves the utility of the model in the design of low‐power MMICs. A maximum frequency of 101.42 GHz at 0.25 μm is obtained, and the results show close agreement with the experimental data, thereby proving the validity of the proposed model. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 377–383, 2000.