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Small‐signal analytical MOSFET model for microwave frequency applications
Author(s) -
Goswami Anisha,
Agrawal Anju,
Thuruthiyil Ciby T.,
Gupta Mridula,
Gupta R. S.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000605)25:5<346::aid-mop16>3.0.co;2-r
Subject(s) - mosfet , microwave , electronic engineering , signal (programming language) , electrical engineering , computer science , engineering , telecommunications , transistor , voltage , programming language
A small‐signal analytical MOSFET model suitable for microwave frequency applications is presented. The effect of parasitic elements, the fringing‐field effect, and distributed‐gate inductance also have been incorporated. The generalized expression for I d – V d characteristics is given, and the admittance parameters extracted are expressed as a function of the MOSFET parameters, parasitic elements, frequency, and bias conditions. The theoretical predictions are compared with experimental/simulated data, and are in good agreement. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 346–352, 2000.