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A new accurate model for drain–gate avalanche current source of GaAs MESFET
Author(s) -
Xiao Q.,
Ooi B. L.,
Ma J.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000520)25:4<269::aid-mop13>3.0.co;2-8
Subject(s) - mesfet , microwave , current (fluid) , optoelectronics , transistor , electrical engineering , engineering , high electron mobility transistor , current source , electronic engineering , materials science , field effect transistor , telecommunications , voltage
A new drain–gate avalanche current source model, which is controlled by V ds and V gs , is proposed. A Fujitsu MESFET transistor, FLC‐103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 269–271, 2000.