Premium
Matching network for microwave applications of semiconductor laser diodes (LDs): Consideration of the effects of electrical parasitics and LD carrier‐dependent impedance
Author(s) -
GhafouriShiraz H.,
Wong W. M.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000505)25:3<197::aid-mop12>3.0.co;2-u
Subject(s) - parasitic extraction , laser , microwave , impedance matching , optoelectronics , laser diode , electrical impedance , diode , semiconductor laser theory , semiconductor , materials science , equivalent circuit , transmission line , electronic engineering , modulation (music) , electrical engineering , engineering , physics , optics , voltage , telecommunications , acoustics
A complete semiconductor laser transmitter model consisting of a matching circuit, an electrical parasitic circuit, and a nonlinear intrinsic laser is introduced. The model is based on the transmission‐line laser modeling method, which is very efficient and flexible. The effect of electrical parasitics on the modulation response of the laser and the associated improvements owing to matching are also reported. It has been found that the dependency of laser impedance on the carrier density is negligible. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 197–200, 2000.