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2.4 GHz single‐balanced diode mixer fabricated on Al 2 O 3 substrate by thin‐film technology
Author(s) -
Linand YenHeng,
Chan YiJen
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000420)25:2<83::aid-mop1>3.0.co;2-g
Subject(s) - balun , schottky diode , diode , microwave , electrical engineering , port (circuit theory) , optoelectronics , materials science , capacitor , inductor , wideband , electronic mixer , substrate (aquarium) , radio frequency , engineering , telecommunications , antenna (radio) , voltage , harmonic mixer , local oscillator , oceanography , geology
A passive balun using spiral inductors and interdigital capacitors has been developed for a 2.4 GHz balanced diode mixer on Al 2 O 3 substrates. Using this passive balun on the input port (RF port and LO port) of a mixer circuit and incorporating the Schottky diode model, a wideband single‐balanced diode mixer was designed, fabricated, and characterized © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 83–86, 2000.