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Current–voltage characteristics and field distribution of pseudomorphic (AlGaAs/InGaAs) modulation‐doped field‐effect transistor for microwave circuit applications
Author(s) -
Agrawal Anju,
Goswami Anisha,
Sen Sujata,
Gupta R. S.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000320)24:6<407::aid-mop14>3.0.co;2-s
Subject(s) - microwave , field effect transistor , optoelectronics , materials science , voltage , modulation (music) , doping , monolithic microwave integrated circuit , charge control , transistor , field (mathematics) , electrical engineering , physics , engineering , power (physics) , cmos , quantum mechanics , amplifier , mathematics , battery (electricity) , acoustics , pure mathematics
A two‐dimensional analytical model for the current–voltage characteristics of a pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor is developed using charge‐control analysis for its microwave circuit applications. The two‐dimensional potential, field, electron concentration, and velocity profiles are expressed explicitly in the saturation region. The results so obtained are compared with the experimental data, and show excellent agreement, thereby proving the validity of the model. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 407–412, 2000.