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High‐ Q Si‐based inductor shielded with double‐layer polysilicon for RF applications
Author(s) -
Tan H. P.,
Ma J. G.,
Yeo K. S.,
Do M. A.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000320)24:6<366::aid-mop2>3.0.co;2-c
Subject(s) - hfss , inductor , shielded cable , q factor , electrical engineering , cmos , microwave , interconnection , radio frequency , optoelectronics , materials science , rfic , engineering , electronic engineering , telecommunications , resonator , antenna (radio) , microstrip antenna , voltage
This letter presents silicon inductors with a high‐quality Q ‐factor shielded with double‐layer polysilicon using only a conventional CMOS double‐metal interconnection technology for 900 MHz–2.5 GHz radio‐frequency integrated circuit (RF IC) applications. The results of the simulation using a 3‐D high‐frequency structure simulator (HFSS) show a significant improvement in the quality factor Q by more than 50% as compared to the conventional rectangular spiral inductor. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 366–367, 2000.