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AlGaInP/GaAs power HBTs design and fabrication
Author(s) -
Zhiqun Cheng,
Xiaowei Sun,
Guanqun Xia,
Huaimao Sheng,
Qin LiHong,
Rong Qian,
Xiangwu Wang
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000305)24:5<332::aid-mop14>3.0.co;2-d
Subject(s) - materials science , fabrication , microwave , power density , optoelectronics , power (physics) , microwave power , electrical engineering , electronic circuit , gallium arsenide , engineering , telecommunications , physics , medicine , alternative medicine , pathology , quantum mechanics
High‐power‐density and high‐efficiency AlGaInP/GaAs power HBTs have been successfully designed and fabricated by using 14 double‐finger emitters in parallel and related input and output matched circuits. The device material structure and layout design are discussed and optimized in detail. An output power of 1.07 W (power density of 2 mW/μm 2 ) with a power‐added efficiency of 64% at 2 GHz has been achieved. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 332–334, 2000.