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An improved Chalmers model for a GaAs MESFET
Author(s) -
Xiao Q.,
Ooi B. L.,
Ma J.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000305)24:5<311::aid-mop9>3.0.co;2-f
Subject(s) - mesfet , intermodulation , amplifier , large signal model , microwave , electronic engineering , engineering , transistor , transistor model , electrical engineering , power (physics) , optoelectronics , materials science , physics , field effect transistor , telecommunications , voltage , cmos , quantum mechanics
An improved Chalmers large‐signal model for a GaAs MESFET transistor is proposed. A commercially packaged high‐power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both hot and cold condition measurements and a pulsed I/V measurement are performed to derive the model. For the verification of the model, a simple single‐stage class‐AB amplifier is subsequently built. The simulation and measurement results of the intermodulation distortion of this amplifier agree excellently. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 311–316, 2000.