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A high‐gain 18–32 GHz MMIC driver amplifier for LMDS application
Author(s) -
D'Agostino S.,
BettiBerutto A.,
Poledrelli C.,
Khandavalli C.,
Satoh T.,
Yokoyama T.,
Kuroda S.,
Fukaya J.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000220)24:4<237::aid-mop9>3.0.co;2-1
Subject(s) - local multipoint distribution service , monolithic microwave integrated circuit , amplifier , electrical engineering , high electron mobility transistor , engineering , microwave , fully differential amplifier , chip , electronic engineering , rf power amplifier , telecommunications , transistor , wireless , cmos , voltage
A high‐gain GaAs MMIC driver amplifier for local multipoint distribution service application delivering 32 dBm output power, with associated gain better than 19 dB, has been developed for high‐volume production. The MMIC realization consists of a four‐stage amplifier integrated in a 2.2×1.5 mm 2 single chip on a 28 μm substrate thickness PHEMT process. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 237–238, 2000.