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A novel bias‐dependent rational model for MESFET and HEMT devices
Author(s) -
Centurelli Francesco,
Pisa Stefano,
Tommasino Pasquale,
Trifiletti Alessandro
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(20000120)24:2<102::aid-mop7>3.0.co;2-z
Subject(s) - mesfet , high electron mobility transistor , microwave , microwave applications , electronic engineering , engineering , electrical engineering , optoelectronics , materials science , transistor , voltage , field effect transistor , telecommunications
An accurate model of MESFETs and HEMTs composed of a dc section and a multibias linear dynamic part is proposed. An automatic procedure to identify model parameters has been developed. Errors below 3% over the whole device working region have been found with GaAs HEMTs up to 50 GHz. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 102–106, 2000.