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Analysis of millimeter‐wave GaN IMPATT oscillator at elevated temperature
Author(s) -
Meng C. C.,
Liao G. R.,
Chen J. W.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19991120)23:4<257::aid-mop20>3.0.co;2-9
Subject(s) - impatt diode , extremely high frequency , wurtzite crystal structure , materials science , optoelectronics , microwave , power density , millimeter , power (physics) , physics , optics , diode , quantum mechanics , zinc , metallurgy
GaN is a suitable material for millimeter‐wave high‐power IMPATT oscillators because of its superior electronic properties—high breakdown electric fields and high electron saturation velocity. In this paper, millimeter‐wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read‐type large‐signal model. The power density of GaN IMPATT devices at millimeter‐wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p + ‐n single‐drift flat‐profile IMPATT oscillators at 300 GHz have an efficiency of 11% and an RF power density of 1.6 MW/cm 2 when operated at 800 K. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 257–259, 1999.