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Uniformity improvement of linear power pHEMTs using a very high selective wet etching
Author(s) -
Hue X.,
Boudart B.,
Bonte B.,
Crosnier Y.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19991105)23:3<192::aid-mop18>3.0.co;2-5
Subject(s) - transconductance , intermodulation , materials science , etching (microfabrication) , linearity , optoelectronics , microwave , electrical engineering , voltage , high electron mobility transistor , amplifier , engineering , transistor , nanotechnology , telecommunications , cmos , layer (electronics)
The realization and characterization of Al 0.22 Ga 0.78 As/In 0.22 Ga 0.78 As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch‐off voltage values have been obtained. The linearity is confirmed by a quasiflat profile of the transconductance and of the maximum available gain (MAG) over a wide gate source voltage. Power and intermodulation distortion measurements at 16 GHz have been performed. An IP3 value of 25 dBm has been obtained for a 2×75 μm device. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 192–194, 1999.