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Characteristic temperature and threshold current comparison of phosphorus‐and‐aluminum‐based 1.3 μm lasers by static and impedance measurements
Author(s) -
Sion Cathy,
Mollot Francis,
Gouy Jean Philippe,
Decoster Didier
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19991105)23:3<156::aid-mop8>3.0.co;2-8
Subject(s) - microwave , materials science , laser , current (fluid) , electrical impedance , optoelectronics , aluminium , charge carrier density , current density , optics , electrical engineering , telecommunications , composite material , physics , engineering , doping , quantum mechanics
We have designed, fabricated, and characterized 1.3 μm lasers which contain both AlGaInAs and GaInAsP alloys in the active zone. We show that the use of aluminum alloys simultaneously increases the characteristic temperature and threshold current. This behavior can be explained by determining the carrier density and carrier lifetime using an impedance measurement technique. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 156–159, 1999.