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Polyimide passivated semitransparent In 0.49 Ga 0.51 P/GasAs MSM photodetector operating at 840 nm wavelength
Author(s) -
Matin M. A.,
Simmons J. G.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990820)22:4<241::aid-mop7>3.0.co;2-j
Subject(s) - photodetector , responsivity , optoelectronics , materials science , dark current , microwave , polyimide , wavelength , biasing , layer (electronics) , optics , voltage , electrical engineering , physics , nanotechnology , telecommunications , computer science , engineering
A polyimide passivated semitransparent metal–semiconductor–metal photodetector (MSM–PD) with an In 0.49 Ga 0.51 P/GaAs layer structure has been fabricated and characterized. For a 50 μm×50μm device with 2 μm finger width and 2 μm finger spacing, we obtained a dark current density of 7.44 μA/cm 2 for a passivated and 11.2 μA/cm 2 for an unpassivated device at 10 V bias. The front illumination responsivity at 0.84 μm wavelength is 0.54–0.74 A/W at 10 V bias for both passivated and unpassivated devices. The dark current and responsivity of a passivated photodetector are nearly independent of the bias voltage as compared with those of an unpassivated photodetector. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 22: 241–243, 1999.