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Transconductance extraction for pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications
Author(s) -
Agrawal Anju,
Goswami Anisha,
Sen Sujata,
Gupta R. S.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990705)22:1<41::aid-mop11>3.0.co;2-q
Subject(s) - transconductance , microwave , extremely high frequency , materials science , doping , field effect transistor , optoelectronics , charge control , modulation (music) , transistor , monolithic microwave integrated circuit , high electron mobility transistor , charge density , electrical engineering , optics , physics , power (physics) , engineering , voltage , telecommunications , cmos , amplifier , battery (electricity) , quantum mechanics , acoustics
An analytical model for two‐dimensional electron gas (2‐DEG) for a pseudomorphic Al z Ga 1−z As/In y Ga 1−y As modulation‐doped field‐effect transistor is developed. The 2‐DEG density is calculated as a function of device dimensions and doping density. A simple analytical expression is established for the charge control. A high transconductance of 270 mS/mm is obtained, which is important in realizing the device for millimeter microwave applications. The results so obtained are compared with experimental data, and show excellent agreement. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 22: 41–48, 1999.