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Well‐coupling and band‐mixing effects on differential gain of coupled quantum wells
Author(s) -
Kucharczyk M.,
Wartak M. S.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990520)21:4<282::aid-mop15>3.0.co;2-j
Subject(s) - quantum well , differential gain , coupling (piping) , mixing (physics) , effective mass (spring–mass system) , differential (mechanical device) , microwave , physics , differential equation , condensed matter physics , quantum electrodynamics , materials science , quantum mechanics , thermodynamics , laser , metallurgy
The structural effect of coupling between quantum wells on differential gain is analyzed. Band‐mixing effects within the Luttinger–Kohn (LK) effective mass equation are rigorously included. The analysis is performed for a GaAs/Al 0.3 Ga 0.7 As system. It shows that well coupling enhances the differential gain for narrow quantum wells (30 Å) for barriers within the range of 20–50 Å depending on carrier concentration. For wide wells (100 Å), the increase of differential gain is observed only for barriers thinner than 10 Å. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 21: 282–286, 1999.