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Improved InGaAs/InP double‐heterojunction bipolar transistors using a thin‐emitter structure design
Author(s) -
Driad R.,
McKin W. R.,
Laframboise S.,
McAlister S. P.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990520)21:4<235::aid-mop1>3.0.co;2-w
Subject(s) - optoelectronics , heterojunction , common emitter , bipolar junction transistor , heterojunction bipolar transistor , materials science , passivation , heterostructure emitter bipolar transistor , indium phosphide , layer (electronics) , transistor , gallium arsenide , electrical engineering , nanotechnology , voltage , engineering
We report an improved thin‐emitter InGaAs/InP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passivation layer avoids the degradation of electrical characteristics observed in InGaAs/InP heterostructures after PECVD deposition. As compared to unpassivated HBTs, the InP passivated devices showed a remarkable improvement of the current gain. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 21: 235–238, 1999.