Premium
Microwave performance and reliability evaluation of MOCVD‐grown AlInAs/GaInAs/InP‐based HEMTs
Author(s) -
Nawaz M.,
Strupinski W.,
Stenarson J.,
Persson S. H. M.,
Zirath H.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990320)20:6<357::aid-mop2>3.0.co;2-h
Subject(s) - metalorganic vapour phase epitaxy , optoelectronics , microwave , materials science , reliability (semiconductor) , cutoff frequency , layer (electronics) , high electron mobility transistor , voltage , transistor , electrical engineering , epitaxy , power (physics) , engineering , nanotechnology , telecommunications , physics , quantum mechanics
We report on the microwave performance and reliability evaluation of AlInAs/GaInAs/InP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers provide high threshold voltage uniformity, and less thermal and bias stress degradation compared to conventional AlInAs/GaInAs/InP HEMTs. A cutoff frequency f T of 53 GHz and maximum frequency f max of 210 GHz for a 0.4 μm gate device is obtained. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 357–362, 1999.