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High‐ Q inductors and low‐loss bandpass filters on Al 2 O 3 substrates by thin‐film technology
Author(s) -
Wu HanHau,
Chan YiJen
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990305)20:5<322::aid-mop12>3.0.co;2-1
Subject(s) - inductor , band pass filter , capacitor , microwave , materials science , broadband , insertion loss , optoelectronics , electrical engineering , electronic engineering , engineering , telecommunications , voltage
High‐ Q spiral inductors were designed and fabricated on high‐resistivity Al 2 O 3 substrates with an air‐bridge technology. A maximum Q ‐value of 36 was achieved for a 2.74 nH inductor at 2.5– 5.5 GHz. Detailed broadband models for inductors and interdigital capacitors have been developed based on measured results, which enable us to build a low insertion loss 2.4 GHz bandpass filter with a size of 2 mm×2 mm. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 322–326, 1999.