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A simple method for ohmic loss in conductors with cross‐section dimensions on the order of skin depth
Author(s) -
Chow Y. L.,
Feng N. N.,
Fang D. G.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990305)20:5<302::aid-mop6>3.0.co;2-t
Subject(s) - asymptote , skin effect , ohmic contact , microwave , conductor , electrical conductor , resistor , simple (philosophy) , electronic circuit , optics , engineering , materials science , electrical engineering , physics , mathematics , geometry , telecommunications , layer (electronics) , nanotechnology , voltage , philosophy , epistemology
The high‐frequency skin‐depth approximation for ohmic loss calculations is not valid if the conductor thickness decreases and approaches the skin depth. This is the situation in many monolithic microwave integrated circuits (MMICs). The two asymptotes of loss, at dc and at high frequency of the above, are, in fact, known. This letter constructs a single synthetic asymptote that joins the two original asymptotes, and gives good loss values at intermediate frequencies where the above skin depth occurs, not unlike a French curve fitting. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 302–304, 1999.