Premium
S ‐band MMIC amplifier using Ga 0.51 In 0.49 P/GaAs MISFETS as active devices
Author(s) -
Lin YoSheng,
Lu SheyShi,
Hai Lan,
Chang PeiZen
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990205)20:3<188::aid-mop12>3.0.co;2-l
Subject(s) - monolithic microwave integrated circuit , optoelectronics , amplifier , materials science , microwave , standing wave ratio , common gate , electrical engineering , electronic engineering , computer science , engineering , telecommunications , cmos , microstrip antenna , antenna (radio)
The first MMIC amplifier using Ga 0.51 In 0.49 P/GaAs MISFETs grown by GSMBE as active devices was fabricated in our laboratory. This monolithic amplifier achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were consistent with simulated results, and demonstrated the high potential of the applications of Ga 0.51 In 0.49 P/GaAs MISFETs to MMICs. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 188–190, 1999.