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Distributed MOSFET power amplifier
Author(s) -
Yuen S.,
Gardner P.,
Walker J. L. B.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990205)20:3<187::aid-mop11>3.0.co;2-p
Subject(s) - rf power amplifier , amplifier , electrical engineering , distributed amplifier , mosfet , power bandwidth , microstrip , bandwidth (computing) , dbm , microwave , engineering , power mosfet , power (physics) , direct coupled amplifier , electronic engineering , transistor , physics , telecommunications , operational amplifier , cmos , voltage , quantum mechanics
A three‐section distributed amplifier was constructed using RF power MOSFETs and microstrip transmission lines delivering higher output levels than previously reported. An output power of 0.7 W (28.5 dBm) was obtained at the −1 dB compression point at class AB bias, giving 11 dB gain over a 700 MHz bandwidth. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 187–188, 1999.