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A ku ‐band gold/ba x sr 1‐ x tio 3 /laalo 3 conductor/thin‐film ferroelectric microstrip line phase shifter for room‐temperature communications applications
Author(s) -
Van Keuls F. W.,
Romanofsky R. R.,
Varaljay N. D.,
Miranda F. A.,
Canedy C. L.,
Aggarwal S.,
Venkatesan T.,
Ramesh R.
Publication year - 1999
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19990105)20:1<53::aid-mop15>3.0.co;2-l
Subject(s) - phase shift module , materials science , insertion loss , ferroelectricity , microstrip , conductor , optoelectronics , microwave , phase (matter) , line (geometry) , thin film , electrical engineering , dielectric , telecommunications , engineering , nanotechnology , composite material , chemistry , geometry , mathematics , organic chemistry
We report on the performance of a Ku ‐band gold/Ba 0.5 Sr 0.5 TiO 3 /LaAlO 3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (Δϕ S 21 ), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low‐loss, thin‐film ferroelectric‐based phase shifters at room temperature. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 53–56, 1999.