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V ‐band switch configuration based on successive resonance's single pole double throw
Author(s) -
Desclos Laurent,
Maruhashi Kenichi,
Madihian Mohammad
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19981220)19:6<406::aid-mop8>3.0.co;2-n
Subject(s) - microwave , insertion loss , resonance (particle physics) , voltage , optoelectronics , electrical engineering , chip , materials science , extremely high frequency , physics , engineering , telecommunications , atomic physics
This letter concerns the design consideration and performance of a V ‐band monolithic T/R switch for millimeter‐wave wireless networks applications. The developed switch IC has a structure using successive resonance's single pole double throw (SRSPDT). The resonances are made with the FET structure and transmission lines in parallel. The switching function is ensured by heterojunction FETs (HJFETs). With a control voltage of 0 V/−3 V, the developed T/R switch exhibits a minimum insertion loss of 5 dB, able to be reduced by 2 dB with another proposed configuration, a minimum isolation of 40 dB, over 5 GHz centered at 63.8 GHz. The monolithic T/R switch chip size is 1.9 mm×1 mm. Performance improvement is at the expense of the size of the chip. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 406–410, 1998.