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Investigation of metal‐penetrating depth in shielded microstrip line
Author(s) -
Hong IcPyo,
Yoon NamIl,
Park SeongKyoon,
Park HanKyu
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19981220)19:6<396::aid-mop6>3.0.co;2-e
Subject(s) - shielded cable , microstrip , microwave , materials science , penetration (warfare) , penetration depth , optics , electromagnetic shielding , eigenfunction , electrical engineering , physics , engineering , composite material , telecommunications , eigenvalues and eigenvectors , operations research , quantum mechanics
In this letter, the propagation characteristics of metal‐penetrating depth into the anisotropic substrate in a shielded microstrip line are investigated. A vertical directional mode‐matching method (MMM), extended from the conventional mode‐matching method, including an inhomogeneous eigenfunction for analyzing this structure has been used and applied to analyze the effect of metal penetration into the anisotropic substrate. The results show that the characteristic impedances and effective dielectric constants of a shielded microstrip line can be represented as a function of the metal‐penetrating depth into the substrate. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 396–398, 1998.